Cheng Yuan-Chung, Silbey Robert J
Department of Chemistry and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
J Chem Phys. 2008 Mar 21;128(11):114713. doi: 10.1063/1.2894840.
To characterize the crossover from bandlike transport to hopping transport in molecular crystals, we study a microscopic model that treats electron-phonon interactions explicitly. A finite-temperature variational method combining Merrifield's transformation with Bogoliubov's theorem is developed to obtain the optimal basis for an interacting electron-phonon system, which is then used to calculate the bandlike and hopping mobilities for charge carriers. Our calculations on the one dimensional (1D) Holstein model at T=0 K and finite temperatures show that the variational basis gives results that compared favorably to other analytical methods. We also study the structures of polaron states at a broad range of parameters including different temperatures. Furthermore, we calculate the bandlike and hopping mobilities of the 1D Holstein model in different parameters and show that our theory predicts universal power-law decay at low temperatures and an almost temperature independent behavior at higher temperatures, in agreement with experimental observations. In addition, we show that as the temperature increases, hopping transport can become dominant even before the polaron state changes its character. Thus, our result indicates that the self-trapping transition studied in conventional polaron theories does not necessarily correspond to the bandlike to hopping transition in the transport properties in organic molecular crystals. Finally, a comparison of our 1D results with experiments on ultrapure naphthalene crystals suggests that the theory can describe the charge-carrier mobilities quantitatively across the whole experimental temperature range.
为了表征分子晶体中从带状传输到跳跃传输的转变,我们研究了一个明确处理电子 - 声子相互作用的微观模型。我们开发了一种将梅里菲尔德变换与博戈留波夫定理相结合的有限温度变分方法,以获得相互作用电子 - 声子系统的最优基,然后用它来计算电荷载流子的带状迁移率和跳跃迁移率。我们在T = 0 K和有限温度下对一维(1D)霍尔斯坦模型的计算表明,变分基给出的结果与其他解析方法相比具有优势。我们还研究了包括不同温度在内的广泛参数下极化子态的结构。此外,我们计算了1D霍尔斯坦模型在不同参数下的带状迁移率和跳跃迁移率,结果表明我们的理论预测在低温下呈普遍的幂律衰减,在高温下几乎与温度无关,这与实验观察结果一致。此外,我们表明,随着温度升高,在极化子态改变其特性之前,跳跃传输就可能占主导地位。因此,我们的结果表明,传统极化子理论中研究的自陷转变不一定对应于有机分子晶体传输性质中从带状到跳跃的转变。最后,将我们的一维结果与超纯萘晶体的实验进行比较表明,该理论可以在整个实验温度范围内定量描述电荷载流子迁移率。