硼掺杂纳米晶金刚石薄膜电极伏安法测定氨基联苯
Voltammetric determination of aminobiphenyls at a boron-doped nanocrystalline diamond film electrode.
作者信息
Barek Jiri, Jandová Katerina, Pecková Karolina, Zima Jirí
机构信息
Charles University in Prague, Faculty of Science, Department of Analytical Chemistry, UNESCO Laboratory of Environmental Electrochemistry, 12843 Prague 2, Czech Republic.
出版信息
Talanta. 2007 Dec 15;74(3):421-6. doi: 10.1016/j.talanta.2007.08.039. Epub 2007 Sep 8.
Voltammetric behavior of 2-aminobiphenyl, 3-aminobiphenyl, and 4-aminobiphenyl at a boron-doped nanocrystalline diamond film electrode was investigated using cyclic voltammetry and differential pulse voltammetry. Optimum conditions have been found for the determination of those genotoxic substances by differential pulse voltammetry at the above given electrode in the concentration range of 2 x 10(-7) to 1 x 10(-5) mol/L.
采用循环伏安法和差分脉冲伏安法研究了2-氨基联苯、3-氨基联苯和4-氨基联苯在硼掺杂纳米晶金刚石薄膜电极上的伏安行为。已找到在上述电极上通过差分脉冲伏安法测定这些遗传毒性物质的最佳条件，其浓度范围为2×10⁻⁷至1×10⁻⁵mol/L。
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