Zang C H, Liu Y C, Mu R, Zhao D X, Zhang J Y, Ma J G, Lu Y M, Yao B, Shen D Z, Fan X W
Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China.
J Nanosci Nanotechnol. 2008 Mar;8(3):1160-4.
This paper describes ZnO nanocrystals embedded in BaF2 matrices by the magnetron sputtering method in an attempt to use fluoride as a shell layer to embed ZnO nanocrystals core. BaF2 is a wide-band gap material, and can confine carriers in the ZnO films. As a result, the exciton emission intensity should be enhanced. The sample was annealed at 773 K, and X-ray diffraction (XRD) results showed that ZnO nanocrystals with wurtzite structure were embedded in BaF2 matrices. Raman-scattering spectra also confirmed the formation of ZnO nanoparticles. Abnormal longitudinal-optical (LO) phonon-dominant multiphonon Raman scattering was observed in the sample. Room-temperature photoluminescence (PL) spectra showed an ultraviolet emission peak at 374 nm. The origin of the ultraviolet emission is discussed here with the help of temperature-dependent PL spectra. The ultraviolet emission band was a mixture of free exciton and bound exciton recombination observed in the low temperature PL spectra (at 77 K). Abnormal temperature dependence of ultraviolet near-band-edge emission-integrated intensity of the sample was observed. The band tail state was observed in the absorption spectra, illustrating that the impurity-related defects were caused by the shell of the BaF2 grain layer. For comparison, ZnO films on BaF2 substrates were also fabricated by the magnetron sputtering method, and the same measurement methods were used.
本文描述了通过磁控溅射法将ZnO纳米晶体嵌入BaF₂基质中,试图利用氟化物作为壳层来包裹ZnO纳米晶体核。BaF₂是一种宽带隙材料,能够将载流子限制在ZnO薄膜中。因此,激子发射强度应该会增强。样品在773K下退火,X射线衍射(XRD)结果表明,具有纤锌矿结构的ZnO纳米晶体嵌入在BaF₂基质中。拉曼散射光谱也证实了ZnO纳米颗粒的形成。在样品中观察到了异常的纵向光学(LO)声子主导的多声子拉曼散射。室温光致发光(PL)光谱在374nm处显示出一个紫外发射峰。在此借助于温度依赖的PL光谱讨论了紫外发射的起源。紫外发射带是在低温PL光谱(77K)中观察到的自由激子和束缚激子复合的混合。观察到了样品紫外近带边发射积分强度的异常温度依赖性。在吸收光谱中观察到了带尾态,说明杂质相关缺陷是由BaF₂晶粒层的壳层引起的。为了进行比较,还通过磁控溅射法在BaF₂衬底上制备了ZnO薄膜,并使用了相同的测量方法。