Wang Rui-Qiang, Wang Baigeng, Xing D Y
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
Phys Rev Lett. 2008 Mar 21;100(11):117206. doi: 10.1103/PhysRevLett.100.117206.
We study spin-dependent shuttle phenomena in a nanoelectromechanical single electron transistor (NEM-SET) with magnetic leads by considering the coupling between the transport of spin-polarized electrons and mechanical oscillations of the nanometer quantum dot. It is shown that there are two different bias-voltage thresholds for the shuttle instability in electronic transport through the NEM-SET, respectively, corresponding to parallel (P) and antiparallel (AP) magnetization alignments. In between the two thresholds, the electronic transport is in the shuttling regime for the P alignment but in the tunneling regime for the AP one, resulting in a very large spin valve effect.
我们通过考虑自旋极化电子输运与纳米量子点机械振动之间的耦合，研究了具有磁性引线的纳米机电单电子晶体管（NEM - SET）中的自旋相关穿梭现象。结果表明，在通过NEM - SET的电子输运中，穿梭不稳定性存在两个不同的偏置电压阈值，分别对应于平行（P）和反平行（AP）磁化排列。在这两个阈值之间，对于P排列，电子输运处于穿梭 regime，但对于AP排列，电子输运处于隧穿 regime，从而产生非常大的自旋阀效应。
