Waldow Michael, Plötzing Tobias, Gottheil Martin, Först Michael, Bolten Jens, Wahlbrink Thorsten, Kurz Heinrich
Institut für Halbleitertechnik, RWTH Aachen University, 52074 Aachen, Germany.
Opt Express. 2008 May 26;16(11):7693-702. doi: 10.1364/oe.16.007693.
We present all-optical switching in oxygen ion implanted silicon microring resonators. Time-dependent signal modulation is achieved by shifting resonance wavelengths of microrings through the plasma dispersion effect via femtosecond photogeneration of electron-hole pairs and subsequent trapping at implantation induced defect states. We observe a switching time of 25 ps at extinction ratio of 9 dB and free carrier lifetime of 15 ps for an implantation dose of 7 x 10(12) cm(-2). The influence of implantation dose on the switching speed and additional propagation losses of the silicon waveguide--the latter as a result of implantation induced amorphization--is carefully evaluated and in good agreement with theoretical predictions.
我们展示了氧离子注入硅微环谐振器中的全光开关。通过飞秒光生电子空穴对并随后俘获到注入诱导的缺陷态，利用等离子体色散效应使微环的共振波长发生偏移，从而实现随时间变化的信号调制。对于注入剂量为7×10(12) cm(-2) 的情况，我们观察到在消光比为9 dB时开关时间为25 ps，自由载流子寿命为15 ps。仔细评估了注入剂量对硅波导开关速度和额外传播损耗的影响——后者是由注入诱导的非晶化导致的——并且与理论预测结果吻合良好。
