Farmer Ce, Smith Kj, Docherty Rj
King's College London, Department of Clinical Neurosciences, London, UK.
Br J Pharmacol. 2008 Sep;155(1):34-43. doi: 10.1038/bjp.2008.235. Epub 2008 Jun 16.
Tetrodotoxin (TTX) is used to distinguish between two classes of voltage-gated sodium channel (VGSC)--TTX sensitive (TTXS) and TTX resistant (TTXR). The resistance of TTXR VGSCs is thought to result from a low binding affinity of TTX, although at high TTX concentrations channel block does occur. Here, we show that, at concentrations below those which produce block, TTX can bind to TTXR VGSCs.
Whole-cell voltage clamp recordings were made from dissociated rat dorsal root ganglion neurones that expressed both TTXS and TTXR sodium currents. Voltage-gated calcium currents were blocked by 10 microM extracellular lanthanum chloride. TTXS, but not TTXR, current was suppressed by using a holding potential of -50 mV, and the effect of TTX on the isolated TTXR current was explored.
Extracellular application of 0.5 microM TTX produced a 40% increase in TTXR current amplitude, a negative shift in the voltage-dependence of current activation (approximately -8 mV) and inactivation (approximately -10 mV) and increased rates of current activation and inactivation. The effect of TTX on current amplitude was dose-dependent (EC50 = 364 nM). Removal of lanthanum prevented the effect of TTX on TTXR current amplitude, whereas reducing extracellular calcium did not.
The findings are consistent with an interpretation that TTX relieves a tonic block of the TTXR VGSC by lanthanum. We conclude that TTX binds to the TTXR VGSC at low concentrations, without blocking it. This appears to be the first demonstration of a clear distinction between binding affinity and blocking potency of a channel-blocking agent.
河豚毒素(TTX)用于区分两类电压门控钠通道(VGSC)——TTX敏感型(TTXS)和TTX耐受型(TTXR)。尽管在高TTX浓度下通道确实会被阻断,但人们认为TTXR VGSC的耐受性是由于TTX的低结合亲和力所致。在此,我们表明,在产生阻断作用的浓度以下,TTX可与TTXR VGSC结合。
从表达TTXS和TTXR钠电流的离体大鼠背根神经节神经元进行全细胞膜片钳记录。电压门控钙电流用10μM细胞外氯化镧阻断。通过使用-50 mV的钳制电位抑制TTXS电流而非TTXR电流,并探究TTX对分离出的TTXR电流的影响。
细胞外施加0.5μM TTX使TTXR电流幅度增加40%,电流激活(约-8 mV)和失活(约-10 mV)的电压依赖性出现负向偏移,并加快了电流激活和失活速率。TTX对电流幅度的影响呈剂量依赖性(EC50 = 364 nM)。去除镧可阻止TTX对TTXR电流幅度的影响,而降低细胞外钙浓度则无此作用。
这些发现与以下解释一致,即TTX可缓解镧对TTXR VGSC的持续性阻断。我们得出结论,TTX在低浓度下与TTXR VGSC结合,但不阻断它。这似乎是首次明确证明通道阻断剂的结合亲和力和阻断效力之间存在明显差异。