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2-丙基-5''-己炔基三联噻吩衍生物近晶E相在宽温度范围内的双极输运

Ambipolar transport in the smectic E phase of 2-propyl-5''-hexynylterthiophene derivative over a wide temperature range.

作者信息

Funahashi Masahiro, Zhang Fapei, Tamaoki Nobuyuki, Hanna Jun-ichi

机构信息

Department of Chemistry and Biotechnology, School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

出版信息

Chemphyschem. 2008 Jul 14;9(10):1465-73. doi: 10.1002/cphc.200800206.

Abstract

5-Hexyl-5''-hexynyl-2,2':5',2''-terthiophene exhibits the smectic E phase below 200 degrees C and does not crystallize when it is cooled to -100 degrees C. Between 200 and -100 degrees C, non-dispersive transport is observed for holes and electrons with time-of-flight spectroscopy. Over the entire temperature range, the electron mobility is approximately twice as high as that of the hole. The hole and electron transport characteristics in the smectic phase below 0 degrees C are explained by the Gaussian disorder model, which was proposed for amorphous organic semiconductors. The disorder parameters, sigma and Sigma, are almost the same for holes and electrons. However, the pre-exponential parameter mu(0) for the electron is twice as large as that for the hole, which can be attributed to the difference in the extension of the LUMO of the molecules. The energetic disorder sigma is primarily determined by the disorder in the orientation of the permanent dipoles of liquid crystal molecules.

摘要

5-己基-5''-己炔基-2,2':5',2''-三联噻吩在200摄氏度以下呈现近晶E相,冷却至-100摄氏度时不结晶。在200至-100摄氏度之间,通过飞行时间光谱法观察到空穴和电子的非色散输运。在整个温度范围内,电子迁移率约为空穴迁移率的两倍。低于0摄氏度的近晶相中的空穴和电子输运特性由为非晶有机半导体提出的高斯无序模型解释。空穴和电子的无序参数sigma和Sigma几乎相同。然而,电子的指数前参数mu(0)是空穴的两倍,这可归因于分子最低未占分子轨道(LUMO)伸展的差异。能量无序sigma主要由液晶分子永久偶极子取向的无序决定。

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