Iino Hiroaki, Ohno Akira, Hanna Jun-Ichi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.
J Chem Phys. 2005 Dec 22;123(24):244701. doi: 10.1063/1.2141507.
We have investigated hole transport properties in the smectic mesophases of a 2-phenylnaphthalene derivative 6-(4'-octylphenyl)-2-dodecyloxynaphthalene in detail by using time-of-flight technique. The transient photocurrents were measured in liquid-crystal cells with various thickness from 5 to 700 microm. They were well defined and nondispersive in the smectic A (SmA) phase up to 500 microm and in the smectic B (SmB) phase within the entire thickness employed, while they exhibited an exponential decay in the SmA phase at 700 microm. The mobilities in the SmA and SmB phases were constant in each mesophase irrespective of the cell thickness, and were 2.5 x 10(-4) and 1.7 x 10(-3) cm2V s, respectively. The hole lifetimes were determined to be 10 ms and longer than 5 ms for the SmA and SmB phases, respectively. We discuss the origin of these lifetimes from the two points of view, i.e., hole trapping by a trace amount of existing impurities and recombination with negative ionic charges. We conclude that impurities are mainly responsible for the present hole lifetime test.
