Merghem K, Akrout A, Martinez A, Moreau G, Tourrenc J-P, Lelarge F, Van Dijk F, Duan G-H, Aubin G, Ramdane A
CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis, France.
Opt Express. 2008 Jul 7;16(14):10675-83. doi: 10.1364/oe.16.010675.
We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.
