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石墨烯中完全谷极化的电子束。

Fully valley-polarized electron beams in graphene.

作者信息

Garcia-Pomar J L, Cortijo A, Nieto-Vesperinas M

机构信息

Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid, Spain.

出版信息

Phys Rev Lett. 2008 Jun 13;100(23):236801. doi: 10.1103/PhysRevLett.100.236801. Epub 2008 Jun 10.

DOI:10.1103/PhysRevLett.100.236801
PMID:18643532
Abstract

We propose a device to break the valley degeneracy in graphene and produce fully valley-polarized currents that can be either split or collimated to a high degree in a experimentally controllable way. The proposal combines two recent seminal ideas: negative refraction and the concept of valleytronics in graphene. The key new ingredient lies in the use of the specular shape of the Fermi surface of the two valleys when a high electronic density is induced by a gate voltage (trigonal warping). By changing the gate voltage in a n-p-n junction of a graphene transistor, the device can be used as a valley beam splitter, where each of the beams belong to a different valley, or as a collimator. The result is demonstrated through an optical analogy with two-dimensional photonic crystals.

摘要

我们提出了一种装置,用于打破石墨烯中的能谷简并性,并产生完全谷极化电流,该电流可以通过实验可控的方式进行高度分裂或准直。该提议结合了两个近期的开创性想法:负折射和石墨烯中的谷电子学概念。关键的新要素在于,当通过栅极电压(三角翘曲)诱导出高电子密度时,利用两个能谷的费米面的镜面形状。通过改变石墨烯晶体管n-p-n结中的栅极电压,该装置可以用作谷分束器,其中每个光束属于不同的能谷,也可以用作准直器。通过与二维光子晶体的光学类比来证明这一结果。

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1
Fully valley-polarized electron beams in graphene.石墨烯中完全谷极化的电子束。
Phys Rev Lett. 2008 Jun 13;100(23):236801. doi: 10.1103/PhysRevLett.100.236801. Epub 2008 Jun 10.
2
Observation of valley-dependent beams in photonic graphene.光子石墨烯中谷依赖光束的观测
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3
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Valley-dependent beams controlled by pseudomagnetic field in distorted photonic graphene.扭曲光子石墨烯中的赝磁场控制谷依赖光束
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Spatial valley separation in strained graphene pn junction.应变石墨烯 pn 结中的空间谷分离
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Gate-voltage-controlled spin and valley polarization transport in a normal/ferromagnetic/normal MoS₂ junction.正常/铁磁/正常MoS₂结中的栅极电压控制自旋和谷极化输运。
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