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钙钛矿型羟基氧化钒纳米棒中的氧自掺杂

Oxygen self-doping in hollandite-type vanadium oxyhydroxide nanorods.

作者信息

Djerdj Igor, Sheptyakov Denis, Gozzo Fabia, Arcon Denis, Nesper Reinhard, Niederberger Markus

机构信息

Department of Materials, ETH Zürich, Wolfgang-Pauli-Strasse 10, 8093 Zürich, Switzerland.

出版信息

J Am Chem Soc. 2008 Aug 27;130(34):11364-75. doi: 10.1021/ja801813a. Epub 2008 Aug 1.

Abstract

A nonaqueous liquid-phase route involving the reaction of vanadium oxychloride with benzyl alcohol leads to the formation of single-crystalline and semiconducting VO 1.52(OH) 0.77 nanorods with an ellipsoidal morphology, up to 500 nm in length and typically about 100 nm in diameter. Composition, structure, and morphology were thoroughly analyzed by neutron and synchrotron powder X-ray diffraction as well as by different electron microscopy techniques (SEM, (HR)TEM, EDX, and SAED). The data obtained point to a hollandite-type structure which, unlike other vanadates, contains oxide ions in the channels along the c-axis, with hydrogen atoms attached to the edge-sharing oxygen atoms, forming OH groups. According to structural probes and magnetic measurements (1.94 mu B/V), the formal valence of vanadium is +3.81 (V (4+)/V (3+) atomic ratio approximately 4). The experimentally determined density of 3.53(5) g/cm (3) is in good agreement with the proposed structure and nonstoichiometry. The temperature-dependent DC electrical conductivity exhibits Arrhenius-type behavior with a band gap of 0.64 eV. The semiconducting behavior is interpreted in terms of electron hopping between vanadium cations of different valence states (small polaron model). Ab initio density-functional calculations with a local spin density approximation including orbital potential (LSDA + U with an effective U value of 4 eV) have been employed to extract the electronic structure. These calculations propose, on the one hand, that the electronic conductivity is based on electron hopping between neighboring V (3+) and V (4+) sites, and, on the other hand, that the oxide ions in the channels act as electron donors, increasing the fraction of V (3+) cations, and thus leading to self-doping. Experimental and simulated electron energy-loss spectroscopy data confirm both the presence of V (4+) and the validity of the density-of-states calculation. Temperature-dependent magnetic susceptibility measurements indicate strongly frustrated antiferromagnetic interactions between the vanadium ions. A model involving the charge order of the V (3+) sites is proposed to account for the observed formation of the magnetic moment below 25 K.

摘要

一种非水液相路线,涉及三氯氧化钒与苯甲醇的反应,可生成单晶且具有半导体性质的VO 1.52(OH) 0.77纳米棒,其形态为椭圆形,长度可达500纳米,直径通常约为100纳米。通过中子和同步辐射粉末X射线衍射以及不同的电子显微镜技术(扫描电子显微镜、(高分辨)透射电子显微镜、能量散射X射线能谱和选区电子衍射)对其组成、结构和形态进行了全面分析。所获得的数据表明其具有钙钛矿型结构,与其他钒酸盐不同,该结构在沿c轴的通道中含有氧离子,氢原子附着在共享边缘的氧原子上,形成OH基团。根据结构探针和磁性测量(1.94 μB/V),钒的形式化合价为+3.81(V(4+)/V(3+)原子比约为4)。实验测定的密度为3.53(5) g/cm³,与所提出的结构和非化学计量比吻合良好。随温度变化的直流电导率呈现阿仑尼乌斯型行为,带隙为0.64 eV。半导体行为是根据不同价态钒阳离子之间的电子跳跃(小极化子模型)来解释的。采用包含轨道势的局域自旋密度近似的从头算密度泛函计算(有效U值为4 eV的LSDA + U)来提取电子结构。这些计算一方面表明电子导电性基于相邻V(3+)和V(4+)位点之间的电子跳跃,另一方面表明通道中的氧离子充当电子供体,增加了V(3+)阳离子的比例,从而导致自掺杂。实验和模拟的电子能量损失谱数据证实了V(4+)的存在以及态密度计算的有效性。随温度变化的磁化率测量表明钒离子之间存在强烈的受挫反铁磁相互作用。提出了一个涉及V(3+)位点电荷有序的模型来解释在25 K以下观察到的磁矩形成。

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