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诊断成像探测器中的基本X射线相互作用限制:频率相关的斯旺克噪声。

Fundamental x-ray interaction limits in diagnostic imaging detectors: frequency-dependent Swank noise.

作者信息

Hajdok G, Battista J J, Cunningham I A

机构信息

Imaging Research Laboratories, Robarts Research Institute, P.O. Box 5015, London, Ontario N6A 5K8, Canada.

出版信息

Med Phys. 2008 Jul;35(7):3194-204. doi: 10.1118/1.2936412.

Abstract

A frequency-dependent x-ray Swank factor based on the "x-ray interaction" modulation transfer function and normalized noise power spectrum is determined from a Monte Carlo analysis. This factor was calculated in four converter materials: amorphous silicon (a-Si), amorphous selenium (a-Se), cesium iodide (CsI), and lead iodide (PbI2) for incident photon energies between 10 and 150 keV and various converter thicknesses. When scaled by the quantum efficiency, the x-ray Swank factor describes the best possible detective quantum efficiency (DQE) a detector can have. As such, this x-ray interaction DQE provides a target performance benchmark. It is expressed as a function of (Fourier-based) spatial frequency and takes into consideration signal and noise correlations introduced by reabsorption of Compton scatter and photoelectric characteristic emissions. It is shown that the x-ray Swank factor is largely insensitive to converter thickness for quantum efficiency values greater than 0.5. Thus, while most of the tabulated values correspond to thick converters with a quantum efficiency of 0.99, they are appropriate to use for many detectors in current use. A simple expression for the x-ray interaction DQE of digital detectors (including noise aliasing) is derived in terms of the quantum efficiency, x-ray Swank factor, detector element size, and fill factor. Good agreement is shown with DQE curves published by other investigators for each converter material, and the conditions required to achieve this ideal performance are discussed. For high-resolution imaging applications, the x-ray Swank factor indicates: (i) a-Si should only be used at low-energy (e.g., mammography); (ii) a-Se has the most promise for any application below 100 keV; and (iii) while quantum efficiency may be increased at energies just above the K edge in CsI and PbI2, this benefit is offset by a substantial drop in the x-ray Swank factor, particularly at high spatial frequencies.

摘要

基于“X射线相互作用”调制传递函数和归一化噪声功率谱的频率相关X射线斯旺克因子,通过蒙特卡罗分析确定。该因子针对四种转换材料进行了计算:非晶硅(a-Si)、非晶硒(a-Se)、碘化铯(CsI)和碘化铅(PbI₂),入射光子能量范围为10至150keV,以及不同的转换层厚度。当按量子效率进行缩放时,X射线斯旺克因子描述了探测器可能具有的最佳探测量子效率(DQE)。因此,这种X射线相互作用DQE提供了一个目标性能基准。它表示为(基于傅里叶的)空间频率的函数,并考虑了康普顿散射和光电特征发射的再吸收所引入的信号和噪声相关性。结果表明,对于量子效率大于0.5的值,X射线斯旺克因子在很大程度上对转换层厚度不敏感。因此,虽然大多数表格值对应于量子效率为0.99的厚转换层,但它们适用于当前使用的许多探测器。根据量子效率、X射线斯旺克因子、探测器单元尺寸和填充因子,推导出了数字探测器(包括噪声混叠)的X射线相互作用DQE的简单表达式。与其他研究人员公布的每种转换材料的DQE曲线显示出良好的一致性,并讨论了实现这种理想性能所需的条件。对于高分辨率成像应用,X射线斯旺克因子表明:(i)非晶硅仅应在低能量(例如乳腺摄影)下使用;(ii)非晶硒在100keV以下的任何应用中最有前景;(iii)虽然在CsI和PbI₂中,刚好高于K边的能量处量子效率可能会提高,但这种好处会被X射线斯旺克因子的大幅下降所抵消,特别是在高空间频率下。

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