Wainwright P F, Alguard M J, Baum G, Lubell M S
J. W. Gibbs Laboratory, Yale University, New Haven, CT 06520, USA.
Rev Sci Instrum. 1978 May;49(5):571. doi: 10.1063/1.1135467.
A polarized electron source based upon the photoionization of unpolarized Cs atoms by circularly polarized light (Fano effect) has been developed and applied to the study of spin dependence in low-energy electron-atom scattering. Electron intensities of 10 nA with polarizations of 0.63+/-0.03 have been obtained routinely during continuous runs of up to 75 h. Frequent optical reversal of the direction of the longitudinal electron polarization minimizes systematic effects so that helicity dependent electron-scattering asymmetries smaller than 4 x 10(-4) can be measured.
一种基于圆偏振光对非偏振铯原子进行光电离（法诺效应）的极化电子源已被开发出来，并应用于低能电子 - 原子散射中自旋依赖性的研究。在长达75小时的连续运行过程中，常规地获得了极化度为0.63±0.03且电子强度为10 nA的结果。纵向电子极化方向的频繁光学反转可将系统效应降至最低，从而能够测量小于4×10⁻⁴的与螺旋度相关的电子散射不对称性。
