Gutsev G L, O'Neal R H, Saha B C, Mochena M D, Johnson E, Bauschlicher C W
Department of Physics, Florida A&M University, Tallahassee, Florida 32307, USA.
J Phys Chem A. 2008 Oct 30;112(43):10728-35. doi: 10.1021/jp803888k. Epub 2008 Oct 4.
The electronic and geometrical structures of the lowest triplet states of (GaAs) n clusters ( n = 2-16) are studied using density functional theory with generalized gradient approximation (DFT-GGA). It is found that the triplet-state geometries are different from the corresponding singlet-state geometries; for n = 2-8, 10, and 11, the triplets and singlets have different topologies, while the (GaAs) 9, (GaAs) 12, (GaAs) 15, and (GaAs) 16 triplets possess a reduced symmetry, due to Jahn-Teller distortions. Except for GaAs, the singlet states are the ground states. Excitation energies and oscillator strengths are computed for excitations from the ground state to ten singlet states of all (GaAs) n clusters using time-dependent density functional theory. The adiabatic singlet-triplet gap is compared to the vertical gap, and the difference in the eigenvalues of the highest-occupied and lowest-unoccupied molecular orbitals (the HOMO-LUMO gap). While these three values show large oscillations for small n, they approach each other as the cluster size grows. Thus, the HOMO-LUMO gap computed using the DFT-GGA approach presents a rather reliable estimate of the adiabatic singlet-triplet gap.
使用广义梯度近似密度泛函理论(DFT-GGA)研究了(GaAs)n团簇(n = 2 - 16)最低三重态的电子结构和几何结构。发现三重态几何结构与相应的单重态几何结构不同;对于n = 2 - 8、10和11,三重态和单重态具有不同的拓扑结构,而(GaAs)9、(GaAs)12、(GaAs)15和(GaAs)16三重态由于 Jahn-Teller 畸变而具有降低的对称性。除了 GaAs 外,单重态是基态。使用含时密度泛函理论计算了所有(GaAs)n团簇从基态到十个单重态的激发能和振子强度。比较了绝热单重态 - 三重态能隙与垂直能隙,以及最高占据分子轨道和最低未占据分子轨道的本征值之差(HOMO-LUMO 能隙)。虽然这三个值在 n 较小时显示出较大的振荡,但随着团簇尺寸的增加,它们相互接近。因此,使用 DFT-GGA 方法计算的 HOMO-LUMO 能隙对绝热单重态 - 三重态能隙给出了相当可靠的估计。