Jdira Lucian, Overgaag Karin, Gerritsen Jan, Vanmaekelbergh Daniël, Liljeroth Peter, Speller Sylvia
Institute for Molecules and Materials, Radboud University Nijmegen, PO Box 9010, 6500 GL Nijmegen, The Netherlands.
Nano Lett. 2008 Nov;8(11):4014-9. doi: 10.1021/nl8026923. Epub 2008 Oct 10.
We use scanning tunnelling microscopy (STM) to controllably contact individual CdSe quantum dots (QDs) in a multilayer array to study electrical contacts to a model QD solid. The probability of electron injection into the QD array depends strongly on the symmetry of the QD wave functions and their response to the local electric field. Quantitative spectroscopy of the QD energy levels is possible if the potential distribution in the STM tip-QD array-substrate system is taken into account.
我们使用扫描隧道显微镜（STM）可控地接触多层阵列中的单个CdSe量子点（QD），以研究与模型量子点固体的电接触。电子注入量子点阵列的概率强烈依赖于量子点波函数的对称性及其对局部电场的响应。如果考虑STM针尖-量子点阵列-衬底系统中的电势分布，就可以对量子点能级进行定量光谱分析。
