Wu Chung-Lin, Lee Hong-Mao, Kuo Cheng-Tai, Chen Chia-Hao, Gwo Shangjr
Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan.
Phys Rev Lett. 2008 Sep 5;101(10):106803. doi: 10.1103/PhysRevLett.101.106803. Epub 2008 Sep 4.
Prior experimental work had found that the Fermi level at InN growth surfaces is pinned well above the conduction band edge, leading to strong surface band bending and electron accumulation. Using cross-sectional scanning photoelectron microscopy and spectroscopy, we show definitive evidence of unpinned Fermi level for in situ cleaved a-plane InN surfaces. To confirm the presence or absence of band bending, the surface Fermi level relative to the valence band edge was precisely measured by using both the Fermi edge of Au reference sample and the core level of ultrathin Au overlayer. It is confirmed that flat surface bands only occur at cleaved nonpolar surfaces, consistent with the recent theoretical predictions.
先前的实验工作发现,氮化铟(InN)生长表面的费米能级被钉扎在导带边缘上方,导致强烈的表面能带弯曲和电子积累。通过截面扫描光电子显微镜和光谱学,我们展示了原位劈开的a面氮化铟表面费米能级未被钉扎的确切证据。为了确认是否存在能带弯曲,通过使用金参考样品的费米边和超薄金覆盖层的芯能级,精确测量了相对于价带边缘的表面费米能级。证实了平坦表面能带仅出现在劈开的非极性表面,这与最近的理论预测一致。