Qiu X P, Yang D Z, Zhou S M, Chantrell R, O'Grady K, Nowak U, Du J, Bai X J, Sun L
Applied Surface Physics Laboratory (State Key Laboratory) and The State Key Lab for Advanced Photonic Materials Devices and Department of Physics, Fudan University, Shanghai 200433, China.
Phys Rev Lett. 2008 Oct 3;101(14):147207. doi: 10.1103/PhysRevLett.101.147207.
For polycrystalline NiFe/FeMn bilayers, we have observed and quantified the rotation of the pinning direction in the exchange bias training and recovery effects. During consecutive hysteresis loops, the rotation of the pinning direction strongly depends on the magnetization reversal mechanism of the ferromagnet layer. The interfacial uncompensated magnetic moment of antiferromagnetic grains may be irreversibly switched and rotated when the magnetization reversal process of the ferromagnet layer is accompanied by domain wall motion and domain rotation, respectively.
对于多晶NiFe/FeMn双层膜,我们已经观察到并量化了交换偏置训练和恢复效应中钉扎方向的旋转。在连续的磁滞回线中,钉扎方向的旋转强烈依赖于铁磁层的磁化反转机制。当铁磁层的磁化反转过程分别伴随着畴壁运动和畴旋转时,反铁磁晶粒的界面未补偿磁矩可能会不可逆地切换和旋转。