钍-铜铁灵络合物催化吸附溶出伏安法测定痕量钍

Determination of trace thorium using catalytic-adsorptive stripping voltammetry of the thorium-cupferron complex.

作者信息

Setiadji R, Wang J, Santana-Rios G

机构信息

Department of Chemistry and Biochemistry, New Mexico State University, Las Cruces, NM 88003, U.S.A.

出版信息

Talanta. 1993 Jun;40(6):845-9. doi: 10.1016/0039-9140(93)80040-x.

DOI:10.1016/0039-9140(93)80040-x

PMID:18965716

Abstract

A sensitive stripping voltammetric procedure for trace measurement of thorium, based on the catalytic-adsorptive peak of the thorium-cupferron complex, is reported. Optimal experimental conditions include the use of 1mM BES buffer solution (pH 5.5), containing 20muM cupferron, an accumulation potential of -0.80 V (vs. Ag/AgCl), and a differential pulse potential scan. The resulting stripping procedure offers improved sensitivity over a previous stripping scheme for thorium. The limit of detection after 5 min preconcentration is 50 ng/l. (2 x 10(-10)M), the response is linear up to 8 x 10(-8)M, and the relative standard deviation at the 2.1 x 10(-8)M level is 4.4%. Possible interferences are evaluated.

摘要

报道了一种基于钍-铜铁试剂络合物催化吸附峰的痕量钍灵敏溶出伏安法。最佳实验条件包括使用含20μM铜铁试剂的1mM BES缓冲溶液（pH 5.5）、-0.80V（相对于Ag/AgCl）的富集电位以及差分脉冲电位扫描。所得溶出方法比之前的钍溶出方案具有更高的灵敏度。5分钟预富集后的检测限为50 ng/l（2×10⁻¹⁰M），响应在高达8×10⁻⁸M时呈线性，在2.1×10⁻⁸M水平下的相对标准偏差为4.4%。评估了可能的干扰。