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用于溶出伏安法的全氟磺酸离子交换膜包覆薄汞膜电极的信号稳定性。

Signal stability of Nafion-coated thin mercury film electrodes for stripping voltammetry.

作者信息

Hoyer B, Jensen N

机构信息

Department of Chemistry, Aarhus University, Langelandsgade 140, 8000 Arhus C, Denmark.

出版信息

Talanta. 1994 Mar;41(3):449-53. doi: 10.1016/0039-9140(94)80151-7.

Abstract

The signal stability of the Nafion-coated thin mercury film electrode (NCTMFE) was studied by using cadmium and lead as test analytes and differential pulse anodic stripping voltammetry as detection method. In particular, the effect of the casting solvent and the curing procedure employed in the preparation of the polymer film was examined. Best results were obtained with N,N-dimethylacetamide as casting solvent and a two-step curing procedure in which the polymer was evaporated to dryness at 55 degrees and cured at 105 degrees with a hot-air gun. Mercury plating was performed ex situ. An NCTMFE prepared in this manner has a better signal stability than ex situ-plated as well as in situ-plated conventional mercury film electrodes.

摘要

以镉和铅作为测试分析物,采用差分脉冲阳极溶出伏安法作为检测方法,研究了涂有Nafion的薄汞膜电极(NCTMFE)的信号稳定性。特别地,考察了聚合物膜制备过程中浇铸溶剂和固化程序的影响。以N,N-二甲基乙酰胺作为浇铸溶剂,并采用两步固化程序,即聚合物先在55℃蒸发至干,然后用热风枪在105℃固化,可获得最佳结果。汞镀是在非原位进行的。以这种方式制备的NCTMFE比非原位镀覆以及原位镀覆的传统汞膜电极具有更好的信号稳定性。

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