Sakai Hiroshi, Kan Hirohumi, Taira Takunori
Central Research Laboratory, Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu, Shizuoka, 434-8601, Japan.
Opt Express. 2008 Nov 24;16(24):19891-9. doi: 10.1364/oe.16.019891.
A high-brightness diode end-pumped Nd:YAG microchip laser, passively Q-switched by a Cr(4+):YAG saturable absorber (SA), has been developed. The dependences of pulse energy and width were investigated based on theoretical verification to enhance the peak power. As a result, the peak power exceeded 1.2 MW with M(2) = 1.04 and spectrum width Delta lambda < 5.1 pm at a repetition rate of 100 Hz. Brightness of 98 TW/sr x cm(2) was obtained with a supplied average electrical power of 2.3 W. The peak power increased up to 2.1 MW with M(2) = 1.36. Peak power of 1.7 MW was obtained from a 2-cm-diameter x 5-cm-long monolithic laser head.
一种由Cr(4+):YAG饱和吸收体（SA）被动调Q的高亮度二极管端面泵浦Nd:YAG微芯片激光器已被研制出来。基于理论验证研究了脉冲能量和宽度的依赖性，以提高峰值功率。结果，在100 Hz的重复频率下，峰值功率超过1.2 MW，M(2) = 1.04，光谱宽度Δλ < 5.1 pm。在2.3 W的平均供电电功率下，获得了98 TW/sr·cm(2)的亮度。峰值功率增加到2.1 MW，M(2) = 1.36。从直径2 cm×长度5 cm的整体式激光头获得了1.7 MW的峰值功率。
