Ding Yong, Wang Zhong Lin
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
Micron. 2009 Apr;40(3):335-42. doi: 10.1016/j.micron.2008.10.008. Epub 2008 Nov 5.
Quasi-one-dimensional (1D) nanostructures, such as nanowires, nanobelts and nanorods, are the forefront materials for nanotechnology. To date, such nanostructures have been synthesized for a wide range of semiconductors and oxides, and they are potential building blocks for fabricating numerous nano-scale devices. 1D ZnO nanostructures, due to its unique semiconducting, piezoelectric, and bio-safe properties, have received wide attention. From structure point of view, a common characteristic of ZnO nanostructures is that they are mostly dislocation-free. However, planar and point defects do frequently exist in such nanostructures. The objective of this paper is to present detailed electron microscopy study about the structures of planar defects, such as stacking faults, twins, inversion domain walls that existed in 1D ZnO nanostructures. These planar defects are important for understanding the growth mechanism and relevant physical and possibly chemical properties of 1D ZnO nanostructures.
准一维（1D）纳米结构，如纳米线、纳米带和纳米棒，是纳米技术的前沿材料。迄今为止，已经为多种半导体和氧化物合成了此类纳米结构，并且它们是制造众多纳米级器件的潜在构建块。一维氧化锌纳米结构因其独特的半导体、压电和生物安全特性而受到广泛关注。从结构角度来看，氧化锌纳米结构的一个共同特征是它们大多无位错。然而，此类纳米结构中确实经常存在平面缺陷和点缺陷。本文的目的是详细介绍关于一维氧化锌纳米结构中存在的平面缺陷（如堆垛层错、孪晶、反畴壁）结构的电子显微镜研究。这些平面缺陷对于理解一维氧化锌纳米结构的生长机制以及相关的物理和可能的化学性质非常重要。
