Chen G, Bhosale J S, Miotkowski I, Ramdas A K
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA.
Phys Rev Lett. 2008 Nov 7;101(19):195502. doi: 10.1103/PhysRevLett.101.195502. Epub 2008 Nov 5.
Growth of single crystals of CdSe with oxygen, introduced by stoichiometric control to suppress the formation of native Se and Cd vacancies, generates oxygen centers replacing Cd (O Cd) rather than Se (O Se) as expected. This antisite substitution is unambiguously singled out by the host isotope fine structure of the nearest neighbor (NN) Se atoms in the localized vibrational modes (LVMs) of O Cd. When the stoichiometry control favors the formation of Cd vacancies, three infrared signatures gamma1, gamma2 and gamma3 appear ascribable to the LVMs of O Se in association with a Cd vacancy in the NN position as (O Se-V Cd) centers. Polarization measurements establish the monoclinic Cs symmetry for these centers. As a function of temperature, they display a remarkable two-step symmetry transformation, Cs-->C3v-->Td, due to the dynamic switching of the O Se-V Cd dangling bond.
通过化学计量控制引入氧气来生长CdSe单晶,以抑制原生硒和镉空位的形成,结果产生了取代镉(O Cd)而非预期的硒(O Se)的氧中心。这种反位取代通过O Cd局域振动模式(LVMs)中最近邻(NN)硒原子的主体同位素精细结构被明确区分出来。当化学计量控制有利于镉空位的形成时,会出现三种红外特征γ1、γ2和γ3,这可归因于与NN位置的镉空位相关联的O Se的LVMs,即(O Se-V Cd)中心。极化测量确定了这些中心的单斜Cs对称性。随着温度的变化,由于O Se-V Cd悬键的动态切换,它们呈现出显著的两步对称转变,Cs-->C3v-->Td。