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通过电流诱导局部阳极氧化在氢钝化硅表面制备的精确控制规则纳米纹理的纳米摩擦学特性。

Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation.

作者信息

Mo Yufei, Zhao Wenjie, Huang Deming, Zhao Fei, Bai Mingwu

机构信息

State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China.

出版信息

Ultramicroscopy. 2009 Feb;109(3):247-52. doi: 10.1016/j.ultramic.2008.10.025. Epub 2008 Nov 14.

Abstract

Nano-sized textures resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication and nanotribological properties of nanotexture by local anodic oxidation (LAO) on H-passivated Si surface are presented. A special attention is paid to find the relation between the size of oxide nanotexture and operational parameters such as tip-sample pulsed bias voltage, pulsewidth, and relative humidity to fabricate oxide nanotexture. The nanotribological properties were investigated by a colloidal probe. The results indicate that the nanotextures exhibited low adhesion and greatly reduced friction force at nanometer scale.

摘要

通过原子力显微镜(AFM)利用局部电化学氧化在氢钝化硅表面制备出纳米尺寸的纹理。本文介绍了在氢钝化硅表面通过局部阳极氧化(LAO)制备纳米纹理及其纳米摩擦学性能。特别关注寻找氧化物纳米纹理的尺寸与诸如针尖 - 样品脉冲偏置电压、脉冲宽度和相对湿度等操作参数之间的关系,以制备氧化物纳米纹理。通过胶体探针研究了纳米摩擦学性能。结果表明,纳米纹理在纳米尺度上表现出低粘附力并极大地降低了摩擦力。

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