Chung Sang Young, Chun Jung Hwan, Kim Dong Eon
Department of Physics, Pohang University of Science and Technology (POSTECH), san 31, Hyoja-Dong, Nam Gu, Pohang 790-784, Korea.
J Nanosci Nanotechnol. 2008 Oct;8(10):5555-7. doi: 10.1166/jnn.2008.1318.
Silicon oxide nanowires which contains Au nanoparticles or an Au nanowire were fabricated by thermal evaporation chemical vapor deposition method using Au as catalyst. Silicon oxide wafers were used as the collector. The diameters of silicon oxide nanowires range from 20 to 150 nm. The larger the diameter of Si nanowire is, the larger the diameter of embedded Au nanoparticles. The separation between Au nanoparticles increases with the diameter. Different forms of silicon oxide nanowires were observed at different growth temperature: silicon oxide nanowires embedded with Au-containing nanoparticles at 1250 degrees C and Au/silicon oxide coaxial nanocable at 1425 degrees C. Using KCN solution, the nanoparticles or the nanocable inside silicon oxide nanowires were extracted, leaving hollow silicon oxide nanotubes.
采用以金为催化剂的热蒸发化学气相沉积法制备了包含金纳米颗粒或金纳米线的氧化硅纳米线。氧化硅晶片用作收集器。氧化硅纳米线的直径范围为20至150纳米。硅纳米线的直径越大,嵌入的金纳米颗粒的直径就越大。金纳米颗粒之间的间距随直径增加。在不同的生长温度下观察到不同形式的氧化硅纳米线:在1250℃时为嵌入含金纳米颗粒的氧化硅纳米线,在1425℃时为金/氧化硅同轴纳米电缆。使用氰化钾溶液提取氧化硅纳米线内部的纳米颗粒或纳米电缆,留下中空的氧化硅纳米管。