Lee Eun Kyung, Choi Byoung Lyong, Park Yong Dae, Kuk Young, Kwon Sun Young, Kim Hyeong Joon
Display Device and Processing Lab, Samsung Advanced Institute of Technology, Youngin, Kyunggi-Do, 449-712, Korea.
Nanotechnology. 2008 May 7;19(18):185701. doi: 10.1088/0957-4484/19/18/185701. Epub 2008 Apr 2.
High quality, single-crystal silicon nanowires were successfully grown from silicon wafers with a nickel catalyst by utilizing a solid-liquid-solid (SLS) mechanism. The nanowires were composed of a crystalline silicon core with an average diameter of 10 nm and a thick outer oxide layer of between 20 and 30 nm at a growth temperature of 1000 °C. When utilizing the SLS growth mechanism, the diameter of the silicon nanowire is dependent solely upon the growth temperature, and has no relation to either the size or the shape of the catalyst. The characteristics of the silicon nanowires are highly dependent upon the properties of the silicon substrate, such as the crystal phase of silicon itself, as well as the doping type. The possibility of doping of silicon nanowires grown via the SLS mechanism without any external dopant source was demonstrated by measuring the electrical properties of a silicon nanowire field effect transistor.
利用固液固（SLS）机制，在含镍催化剂的硅片上成功生长出了高质量的单晶硅纳米线。这些纳米线由平均直径为10纳米的晶体硅芯和在1000 °C生长温度下20至30纳米厚的外层氧化层组成。当采用SLS生长机制时，硅纳米线的直径仅取决于生长温度，与催化剂的尺寸和形状均无关。硅纳米线的特性高度依赖于硅衬底的性质，例如硅本身的晶相以及掺杂类型。通过测量硅纳米线场效应晶体管的电学性能，证明了在没有任何外部掺杂源的情况下，通过SLS机制生长的硅纳米线进行掺杂的可能性。
