Chuang Vivian P, Ross Caroline A, Bilalis Panayiotis, Hadjichristidis Nikos
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
ACS Nano. 2008 Oct 28;2(10):2007-14. doi: 10.1021/nn8002345.
Although there has been extensive work on the use of self-assembled diblock copolymers for nanolithography, there are few reports of the use of multiblock copolymers, which can form a more diverse range of nanoscale pattern geometries. Pattern transfer from a self-assembled poly(butadiene-b-styrene-b-methyl methacrylate) (PB-b-PS-b-PMMA) triblock terpolymer thin film has been investigated. Polymers of different total molecular weight were synthesized with a predicted morphology consisting of PMMA-core/PS-shell cylinders in a PB matrix. By adjusting the solvent-annealing conditions and the film thickness, thin films with vertically oriented cylinders were formed. The PMMA cylinder cores and the PB matrix were then removed using selective etching to leave an array of PS rings, and the ring pattern was transferred into a silica film by reactive ion etching to form 19 nm high silica rings. This result illustrates the design and use of triblock terpolymers for self-assembled lithography.
尽管在将自组装二嵌段共聚物用于纳米光刻方面已有大量研究工作，但关于使用多嵌段共聚物的报道却很少，而多嵌段共聚物能够形成更多样化的纳米级图案几何形状。已对自组装的聚（丁二烯 - b - 苯乙烯 - b - 甲基丙烯酸甲酯）（PB - b - PS - b - PMMA）三嵌段三元共聚物薄膜的图案转移进行了研究。合成了不同总分子量的聚合物，其预测形态为由PB基质中的PMMA核/PS壳圆柱体组成。通过调整溶剂退火条件和薄膜厚度，形成了具有垂直取向圆柱体的薄膜。然后使用选择性蚀刻去除PMMA圆柱体核和PB基质，留下PS环阵列，并通过反应离子蚀刻将环形图案转移到二氧化硅薄膜中，以形成19纳米高的二氧化硅环。这一结果说明了三嵌段三元共聚物用于自组装光刻的设计与应用。
