病毒模板半导体量子点的纳米级记忆特性表征
Nanoscale memory characterization of virus-templated semiconducting quantum dots.
作者信息
Portney Nathaniel G, Martinez-Morales Alfredo A, Ozkan Mihrimah
机构信息
Department of Bioengineering, University of California, Riverside, California 92521, USA.
出版信息
ACS Nano. 2008 Feb;2(2):191-6. doi: 10.1021/nn700240z.
We have developed a substrate-based bottom-up approach to assemble two different color emitting quantum dots (CdSe/ZnS core/shell QDs) on the surface of a novel virus mutant, CPMV-T184C. Electrical characteristics of individual hybrids were investigated by conductive atomic force microscopy for potential digital memory applications (i.e., RAM). These individual 40 nm CPMV-QD(1,2) hybrids exhibited reversible bistable electrical behavior during repeatable writing-reading-erasing processes at the nanoscale.
我们开发了一种基于底物的自下而上方法，用于在新型病毒突变体CPMV-T184C的表面组装两种不同颜色发光的量子点（CdSe/ZnS核/壳量子点）。通过导电原子力显微镜研究了单个杂交体的电学特性，以用于潜在的数字存储应用（即随机存取存储器）。这些单个的40纳米CPMV-QD(1,2)杂交体在纳米尺度的可重复写入-读取-擦除过程中表现出可逆的双稳态电学行为。
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