Pathak Sandeep, Shenoy Vijay B, Randeria Mohit, Trivedi Nandini
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India.
Phys Rev Lett. 2009 Jan 16;102(2):027002. doi: 10.1103/PhysRevLett.102.027002. Epub 2009 Jan 13.
We investigate the asymmetry between electron and hole doping in a 2D Mott insulator and the resulting competition between antiferromagnetism (AFM) and d-wave superconductivity (SC), using variational Monte Carlo calculations for projected wave functions. We find that key features of the T=0 phase diagram, such as critical doping for SC-AFM coexistence and the maximum value of the SC order parameter, are determined by a single parameter eta which characterizes the topology of the "Fermi surface" at half filling defined by the bare tight-binding parameters. Our results give insight into why AFM wins for electron doping, while SC is dominant on the hole-doped side. We also suggest using band structure engineering to control the eta parameter for enhancing SC.
我们使用投影波函数的变分蒙特卡罗计算方法,研究二维莫特绝缘体中电子掺杂和空穴掺杂之间的不对称性,以及由此产生的反铁磁性(AFM)和d波超导性(SC)之间的竞争。我们发现,T = 0相图的关键特征,如SC-AFM共存的临界掺杂和SC序参量的最大值,由单个参数η决定,该参数表征了由裸紧束缚参数定义的半填充时“费米面”的拓扑结构。我们的结果深入揭示了为什么AFM在电子掺杂时占优,而SC在空穴掺杂一侧占主导。我们还建议利用能带结构工程来控制η参数以增强SC。