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高温超导体中反铁磁态与超导态之间的竞争、电子 - 空穴掺杂不对称性以及费米面拓扑结构

Competition between antiferromagnetic and superconducting states, electron-hole doping asymmetry, and fermi-surface topology in high temperature superconductors.

作者信息

Pathak Sandeep, Shenoy Vijay B, Randeria Mohit, Trivedi Nandini

机构信息

Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India.

出版信息

Phys Rev Lett. 2009 Jan 16;102(2):027002. doi: 10.1103/PhysRevLett.102.027002. Epub 2009 Jan 13.

Abstract

We investigate the asymmetry between electron and hole doping in a 2D Mott insulator and the resulting competition between antiferromagnetism (AFM) and d-wave superconductivity (SC), using variational Monte Carlo calculations for projected wave functions. We find that key features of the T=0 phase diagram, such as critical doping for SC-AFM coexistence and the maximum value of the SC order parameter, are determined by a single parameter eta which characterizes the topology of the "Fermi surface" at half filling defined by the bare tight-binding parameters. Our results give insight into why AFM wins for electron doping, while SC is dominant on the hole-doped side. We also suggest using band structure engineering to control the eta parameter for enhancing SC.

摘要

我们使用投影波函数的变分蒙特卡罗计算方法,研究二维莫特绝缘体中电子掺杂和空穴掺杂之间的不对称性,以及由此产生的反铁磁性(AFM)和d波超导性(SC)之间的竞争。我们发现,T = 0相图的关键特征,如SC-AFM共存的临界掺杂和SC序参量的最大值,由单个参数η决定,该参数表征了由裸紧束缚参数定义的半填充时“费米面”的拓扑结构。我们的结果深入揭示了为什么AFM在电子掺杂时占优,而SC在空穴掺杂一侧占主导。我们还建议利用能带结构工程来控制η参数以增强SC。

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