Watanabe Hiroshi, Seo Hitoshi, Yunoki Seiji
RIKEN Cluster for Pioneering Research (CPR), Wako, Saitama, 351-0198, Japan.
Waseda Institute for Advanced Study, Waseda University, Shinjuku, Tokyo, 169-8050, Japan.
Nat Commun. 2019 Jul 18;10(1):3167. doi: 10.1038/s41467-019-11022-1.
Unconventional superconductivity in molecular conductors is observed at the border of metal-insulator transitions in correlated electrons under the influence of geometrical frustration. The symmetry as well as the mechanism of the superconductivity (SC) is highly controversial. To address this issue, we theoretically explore the electronic properties of carrier-doped molecular Mott system κ-(BEDT-TTF)X. We find significant electron-hole doping asymmetry in the phase diagram where antiferromagnetic (AF) spin order, different patterns of charge order, and SC compete with each other. Hole-doping stabilizes AF phase and promotes SC with d-wave symmetry, which has similarities with high-T cuprates. In contrast, in the electron-doped side, geometrical frustration destabilizes the AF phase and the enhanced charge correlation induces another SC with extended-s + [Formula: see text]wave symmetry. Our results disclose the mechanism of each phase appearing in filling-control molecular Mott systems, and elucidate how physics of different strongly-correlated electrons are connected, namely, molecular conductors and high-T cuprates.
在几何阻挫的影响下,关联电子体系中金属 - 绝缘体转变的边界处观察到分子导体中的非常规超导现象。超导的对称性以及机制极具争议性。为解决这一问题,我们从理论上探索了载流子掺杂分子莫特体系κ-(BEDT - TTF)X的电子性质。我们发现在相图中存在显著的电子 - 空穴掺杂不对称性,其中反铁磁(AF)自旋序、不同的电荷序模式以及超导相互竞争。空穴掺杂使AF相稳定,并促进具有d波对称性的超导,这与高温铜酸盐有相似之处。相比之下,在电子掺杂一侧,几何阻挫使AF相不稳定,增强的电荷关联诱导出另一种具有扩展s + [公式:见原文]波对称性的超导。我们的结果揭示了填充控制分子莫特体系中各相出现的机制,并阐明了不同强关联电子体系(即分子导体和高温铜酸盐)的物理性质是如何联系的。