Sakai Shiro, Motome Yukitoshi, Imada Masatoshi
Department of Applied Physics, University of Tokyo, Hongo, Tokyo 113-8656, Japan.
Phys Rev Lett. 2009 Feb 6;102(5):056404. doi: 10.1103/PhysRevLett.102.056404. Epub 2009 Feb 4.
We study the evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fermi arcs, in-gap states, Lifshitz transitions, and non-Fermi liquids appears as natural consequences of this global interference in the frequency space.
我们使用动力学平均场理论的团簇扩展方法，研究了载流子掺杂二维哈伯德模型中金属从莫特绝缘体的演化。传统金属仅由费米面（格林函数(G)的极点）来表征，而在掺杂莫特绝缘体中，(G)的零表面与极点表面的干涉变得至关重要。当轻掺杂空穴协同地削弱双空穴 - 双电子束缚时，相互干涉的极点和零表面会在莫特能隙上发生显著转移。莫特物理的核心，如赝能隙、空穴口袋、费米弧、能隙态、里夫希茨转变和非费米液体，都是这种频率空间中全局干涉的自然结果。
