Choy Ting-Pong, Phillips Philip
Loomis Laboratory of Physics, University of Illinois at Urbana-Champaign, 1110 W Green Street, Urbana, Illinois 61801-3080, USA.
Phys Rev Lett. 2005 Nov 4;95(19):196405. doi: 10.1103/PhysRevLett.95.196405. Epub 2005 Nov 2.
We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbor singlet-triplet splitting. As this energy scale vanishes if transitions, virtual or otherwise, to the upper Hubbard band are not permitted, the fundamental length scale in the pseudogap regime is the average distance between doubly occupied sites. Consequently, the pseudogap is tied to the noncommutativity of the two limits U-->infinity (U the on-site Coulomb repulsion) and L -->infinity (the system size).
我们证明,即使没有无序,轻掺杂空穴的莫特绝缘体在低温下仍是绝缘体。空穴局域化的出现是因为化学势处于一个赝能隙中,该赝能隙在零温度下态密度为零。赝能隙的能量尺度由最近邻单重态 - 三重态分裂设定。由于如果不允许向更高的哈伯德带进行虚拟或其他形式的跃迁,这个能量尺度就会消失,所以赝能隙区域的基本长度尺度是双重占据位点之间的平均距离。因此,赝能隙与两个极限U→∞(U为在位库仑排斥)和L→∞(系统尺寸)的不可对易性相关。