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构象受限的低聚硅烷隧道结中的强电导变化

Strong conductance variation in conformationally constrained oligosilane tunnel junctions.

作者信息

George Christopher B, Ratner Mark A, Lambert Joseph B

机构信息

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA.

出版信息

J Phys Chem A. 2009 Apr 23;113(16):3876-80. doi: 10.1021/jp809963r.

Abstract

The effects of molecular conformation on conductance in oligosilane-bridged metal-molecule-metal junctions are studied theoretically using density functional theory combined with a nonequilibrium Green's function approach. Varying the internal SiSiSiSi dihedral angles in hexasilane diamine chains changes the conductance by up to 3 orders of magnitude. This conformational dependence is due to the effects of sigma-delocalization on the positions of the highest occupied molecular orbital (HOMO) energies. The conductance values for the different conformations are related to electron transfer rates in donor-bridge-acceptor systems, and the effect of shifting the injection energy is examined. The transport properties are found to be extremely sensitive to the alignment between the HOMO energies and Fermi level of the gold electrodes.

摘要

采用密度泛函理论结合非平衡格林函数方法,对寡硅烷桥连金属 - 分子 - 金属结中分子构象对电导的影响进行了理论研究。改变六硅烷二胺链中内部SiSiSiSi二面角会使电导变化高达3个数量级。这种构象依赖性是由于σ离域对最高占据分子轨道(HOMO)能量位置的影响。不同构象的电导值与供体 - 桥 - 受体系统中的电子转移速率有关,并研究了注入能量偏移的影响。发现传输性质对金电极的HOMO能量与费米能级之间的对齐极为敏感。

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