Bordas Frédéric, Seassal Christian, Dupuy Emmanuel, Regreny Philippe, Gendry Michel, Viktorovitch Pierre, Steel M J, Rahmani Adel
Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully, France.
Opt Express. 2009 Mar 30;17(7):5439-45. doi: 10.1364/oe.17.005439.
We have designed, fabricated, and characterized an InP photonic crystal slab structure that supports a cavity-confined slow-light mode, i.e. a bandgap-confined valence band-edge mode. Three dimensional finite difference in time domain calculations predict that this type of structure can support electromagnetic modes with large quality factors and small mode volumes. Moreover these modes are robust with respect to fabrication imperfections. In this paper, we demonstrate room-temperature laser operation at 1.5 mum of a cavity-confined slow-light mode under pulsed excitation. The gain medium is a single layer of InAs/InP quantum dots. An effective peak pump power threshold of 80 microW is reported.
我们设计、制造并表征了一种磷化铟光子晶体平板结构，该结构支持一种腔限制慢光模式，即带隙限制价带边缘模式。三维时域有限差分计算预测，这种结构可以支持具有高品质因数和小模式体积的电磁模式。此外，这些模式对于制造缺陷具有鲁棒性。在本文中，我们展示了在脉冲激发下，腔限制慢光模式在1.5微米波长处的室温激光运转。增益介质是单层砷化铟/磷化铟量子点。报道的有效峰值泵浦功率阈值为80微瓦。
