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电子对二氮杂-Cope重排动力学的影响。

Electronic effect on the kinetics of the diaza-cope rearrangement.

作者信息

Lee Dong-Nam, Kim Hyunwoo, Mui Leo, Myung Seung-Woon, Chin Jik, Kim Hae-Jo

机构信息

Department of Chemistry, College of Natural Sciences, Kyonggi University, Suwon 443-760, Korea.

出版信息

J Org Chem. 2009 May 1;74(9):3330-4. doi: 10.1021/jo900133g.

Abstract

Hammett plot reveals that there is a significant electronic effect on the rate of resonance assisted hydrogen bond (RAHB) directed diaza-Cope rearrangement reaction with a rho value of 1.6. DFT computation shows that the rearrangement reaction becomes thermodynamically more favorable for the substrates with electron withdrawing substituents. A substrate with the nitro substituent (1a) reacts about 50-fold faster than that with the methoxy substituent (1g).

摘要

哈米特图显示,共振辅助氢键(RAHB)导向的二氮杂-Cope重排反应速率存在显著的电子效应,ρ值为1.6。密度泛函理论计算表明,对于具有吸电子取代基的底物,重排反应在热力学上更有利。带有硝基取代基的底物(1a)的反应速度比带有甲氧基取代基的底物(1g)快约50倍。

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