Han Xu, Balgar Thorsten, Hasselbrink Eckart
Fachbereich Chemie and Centre for Nanointegration (CeNIDE), Universitat Duisburg-Essen, D-45117 Essen, Germany.
J Chem Phys. 2009 Apr 7;130(13):134701. doi: 10.1063/1.3102438.
The vibrational dynamics of the H stretch excitation on the Ge(100)-(2x1) and Ge(111)-(1x1) surfaces has been studied using picosecond IR pump-SFG probe spectroscopy. Moreover, the temperature dependence and an isotope mixture effect are reported. The symmetric stretching mode at 1994 cm(-1) on the Ge(100)-(2x1):H surface shows a single-exponential relaxation with a decay constant of 4.8+/-0.6 ns at 100 K with a strong temperature dependence, while the Ge-H stretch at 1975 cm(-1) on the Ge(111)-(1x1):H surface relaxes four times faster with a 1.3+/-0.2 ns lifetime also exhibiting a weaker temperature dependence. The lifetime decreases with increasing temperature to 1.6 and 0.74 ns at 400 K on Ge(100) and Ge(111), respectively. We find that the decay rate increases by a factor of 3-6 depending on sample temperature when the Ge(100) surface dimers are saturated with an isotope mixture of H and D. Such an effect upon isotope mixing is not observed for the Ge(111) surface. The results suggest for the Ge(100)-(2x1):H system that a decay into three bending mode quanta requires the creation of two-optical phonons to satisfy energy conservation, whereas the decay into four bending quanta requires the annihilation of only one phonon. The three bending quanta process is hence the slower one. However, the decay into four bending quanta shows a strong temperature dependence. For an isotope mixture covered surface a larger number of combinations of low-frequency adsorbate modes exist facilitating a faster decay of the stretching excitation.
利用皮秒红外泵浦-和频产生探测光谱研究了Ge(100)-(2x1)和Ge(111)-(1x1)表面上H伸缩激发的振动动力学。此外,还报道了温度依赖性和同位素混合效应。Ge(100)-(2x1):H表面1994 cm(-1)处的对称伸缩模式在100 K时呈现单指数弛豫,衰减常数为4.8±0.6 ns,具有很强的温度依赖性,而Ge(111)-(1x1):H表面1975 cm(-1)处的Ge-H伸缩弛豫速度快四倍,寿命为1.3±0.2 ns,温度依赖性也较弱。在400 K时,Ge(100)和Ge(111)表面的寿命分别降至1.6和0.74 ns。我们发现,当Ge(100)表面二聚体被H和D的同位素混合物饱和时,根据样品温度,衰减率会增加3至6倍。对于Ge(111)表面,未观察到同位素混合的这种效应。结果表明,对于Ge(100)-(2x1):H体系,衰变为三个弯曲模式量子需要产生两个光学声子以满足能量守恒,而衰变为四个弯曲量子仅需要湮灭一个声子。因此,三个弯曲量子的过程较慢。然而,衰变为四个弯曲量子表现出很强的温度依赖性。对于同位素混合物覆盖的表面,存在大量低频吸附质模式的组合,这促进了伸缩激发的更快衰减。