Yu Yonggui, Wang Jiyang, Zhang Huaijin, Wang Zhengping, Yu Haohai, Jiang Minhua
State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China.
Opt Lett. 2009 Feb 15;34(4):467-9. doi: 10.1364/ol.34.000467.
Laser-diode (LD)-pumped high-power cw and passively Q-switched laser performance has been demonstrated with a disordered Nd-doped La(3)Ga(5)SiO(14) (Nd:LGS) crystal for the first time to our knowledge. A cw output power of 2.25 W was obtained under an absorbed pump power of 7.84 W with a slope efficiency of 30.2%. Using a Cr:YAG as a saturable absorber, the passively Q-switched laser was achieved. The maximum pulse energy, shortest pulse width, and highest peak power were measured to be 117.5 muJ, 23.4 ns, and 5.02 kW, respectively.
据我们所知，首次利用无序掺钕的镧镓硅石（Nd:LGS）晶体展示了激光二极管（LD）泵浦的高功率连续波和被动调Q激光性能。在7.84 W的吸收泵浦功率下，获得了2.25 W的连续波输出功率，斜率效率为30.2%。使用Cr:YAG作为可饱和吸收体，实现了被动调Q激光。测得的最大脉冲能量、最短脉冲宽度和最高峰值功率分别为117.5 μJ、23.4 ns和5.02 kW。
