[通过扫描电子显微镜和X射线能量色散谱对钴掺杂氧化锌稀磁半导体晶体进行的微分析研究]
[Microanalysis study of Co-doped ZnO DMS crystal by SEM and XREDS].
作者信息
Qiu Man-De, Yao Zi-Hua, Wei Zhi-Ren, Zhai Yong-Qing, Tian Shuai, Zhang Shuang
机构信息
College of Chemistry and Environmental Science, Hebei University, Baoding 071002, China.
出版信息
Guang Pu Xue Yu Guang Pu Fen Xi. 2009 Jan;29(1):277-80.
In the present paper,with CoCl2 x 6H2O used as precursor, Co-doped ZnO diluted magnetic semiconductor (DMS) crystals were synthesized by hydrothermal method with KOH as mineralizer. The morphology, and the relative content and distribution uniformity of the surface and inner Co element of synthesized crystals were investigated by scanning electron microscope (SEM) and X-ray energy dispersive spectrometry (XREDS), respectively. It was found that Co-doped ZnO crystals with different morphology were yielded, while the bigger crystals showed polar growth charactertistics, and the Co content in the crystal depended on its morphology. The exposed face also changed with crystal morphology. There was more Co in bigger crystals than in smaller ones. Moreover, more Co located in +c (10 11)compared to +c (10 10) exposed face, especially for cone crystals. In addition, it was observed that there was a little amount of cobalt oxide cluster in inner crystal,and the distribution of Co content was relative uniform in both the surface and inner part of the crystal. Cobalt oxide cluster may have effect on the magnetic properties of Co-doped ZnO diulted magnetic semiconductor since Co2+ possesses magnetic property.
在本论文中,以六水合氯化钴(CoCl₂·6H₂O)为前驱体,以氢氧化钾(KOH)为矿化剂,采用水热法合成了钴掺杂氧化锌稀磁半导体(DMS)晶体。分别利用扫描电子显微镜(SEM)和X射线能量色散谱仪(XREDS)对合成晶体的形貌以及表面和内部钴元素的相对含量与分布均匀性进行了研究。结果发现,得到了具有不同形貌的钴掺杂氧化锌晶体,较大的晶体呈现出极性生长特征,并且晶体中的钴含量取决于其形貌。晶体的暴露面也随晶体形貌而变化。较大晶体中的钴含量比较小晶体中的多。此外,与+c(10 10)暴露面相比,+c(10 11)面上的钴更多,尤其是对于锥形晶体。另外,观察到晶体内部存在少量氧化钴簇,并且钴含量在晶体的表面和内部的分布相对均匀。由于Co²⁺具有磁性,氧化钴簇可能会对钴掺杂氧化锌稀磁半导体的磁性产生影响。