溶胶-凝胶旋涂法制备 TM 共掺 Al:ZnO(TM=Co、Ni)稀磁半导体薄膜及其性能表征。

Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM=Co, Ni) thin films by sol-gel spin coating method.

机构信息

Advanced Ceramics and Nanotechnology Laboratory, Department of Materials Engineering, University of Concepcion, Concepcion, Chile.

出版信息

Spectrochim Acta A Mol Biomol Spectrosc. 2013 Apr;106:118-23. doi: 10.1016/j.saa.2013.01.017. Epub 2013 Jan 19.

DOI:10.1016/j.saa.2013.01.017

PMID:23396005

Abstract

Effect of transition metal oxides (TM=Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540cm(-1) due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

摘要

过渡金属氧化物（TM=Co 和 Ni）共掺杂对纳米结构 Al:ZnO 薄膜结晶度、表面形貌、晶粒生长和磁性的影响，用于稀磁半导体应用。Al:ZnO 薄膜通过溶胶-凝胶旋涂法在 p 型 Si（100）衬底上制备。成功制备了具有 2μm 厚度的六方纤锌矿 TM 共掺杂 Al:ZnO 薄膜。TM 共掺杂 Al:ZnO 薄膜的 Raman 光谱在 520-540cm(-1)范围内显示出一个宽的振动模式，这是由于共掺杂元素在 ZnO 主晶格中产生的晶体缺陷所致。扫描电子显微镜（SEM）显示，薄膜由均匀尺寸、无缺陷、光滑表面的多晶致密 ZnO 颗粒组成。表面粗糙度进一步通过原子力显微镜（AFM）得到验证。能谱分析（EDX）证实了 TM 共掺杂 Al:ZnO 薄膜的化学计量比组成。磁性测量表明，Co、Al:ZnO 和 Ni、Al:ZnO 薄膜在室温下具有铁磁性。