Greegor R, Parazzoli C, Li K, Koltenbah B, Tanielian M
Opt Express. 2003 Apr 7;11(7):688-95. doi: 10.1364/oe.11.000688.
Negative index of refraction materials have been postulated for many years but have only recently been realized in practice. In the microwave region these materials are constructed of rings and wires deposited on a dielectric substrate to form a unit cell. We have constructed, experimentally characterized and simulated several of these structures operating in the 10 - 15 GHz range. Our simulations using Maxwell's Equations solvers have included wire arrays, ring arrays and assemblies of unit cells comprised of rings and wires. We find good agreement between the numerical simulations and experimental measurements of the scattering parameters and index of refraction. The procedure was to first model ring and wire structures on the unit cell level to obtain scattering parameters from which effective å, ì and n were retrieved. Next an assembled array of unit cells forming a 12 degrees wedge was used for the Snell's Law determination of the negative index of refraction. For the structure examined the computed value of n is within 20% of the one experimentally measured in the Snell's Law experiment from 13.6 to 14.8 GHz.
负折射率材料已被假定存在多年,但直到最近才在实践中得以实现。在微波频段,这些材料由沉积在电介质基板上的环和线构成,形成一个单元胞。我们已经构建了几种工作在10 - 15GHz范围内的此类结构,并对其进行了实验表征和模拟。我们使用麦克斯韦方程组求解器进行的模拟包括线阵列、环阵列以及由环和线组成的单元胞组件。我们发现散射参数和折射率的数值模拟与实验测量结果吻合良好。具体步骤是首先在单元胞层面上对环和线结构进行建模,以获得散射参数,进而从中推导出有效介电常数、磁导率和折射率。接下来,使用由单元胞组成的12度楔形组装阵列,通过斯内尔定律来测定负折射率。对于所研究的结构,在13.6至14.8GHz的斯内尔定律实验中,计算得到的折射率值与实验测量值的偏差在20%以内。