Krause Michael, Renner Hagen, Brinkmeyer Ernst
Opt Express. 2004 Nov 15;12(23):5703-10. doi: 10.1364/opex.12.005703.
Numerical analysis predicts that continuous-wave Raman lasing is possible in silicon-on-insulator (SOI) waveguides, in spite of the detrimental presence of two-photon absorption and free-carrier absorption. We discuss in particular the dependence of the lasing characteristics of SOI Raman lasers on the effective lifetime of the free carriers generated by two-photon absorption. It is shown that the pump-power-dependent cavity losses lead to a rollover of the output-power characteristics at a certain pump-power level and that there exists an upper shutdown threshold at which the laser operation breaks down.
数值分析预测，尽管存在双光子吸收和自由载流子吸收的不利影响，但绝缘体上硅（SOI）波导中仍有可能实现连续波拉曼激光发射。我们特别讨论了SOI拉曼激光器的激光特性对双光子吸收产生的自由载流子有效寿命的依赖性。结果表明，与泵浦功率相关的腔损耗会导致输出功率特性在一定泵浦功率水平下出现翻转，并且存在一个上限关闭阈值，超过该阈值激光操作就会失效。
