Chen B, Sun X, Wong K, Hu X
Opt Express. 2005 Jan 10;13(1):26-31. doi: 10.1364/opex.13.000026.
The device characteristics of organic light-emitting devices based on tris-(8-hydroxyqunoline) aluminum devices with LiF/Mg:Ag/Ag cathodes were investigated. The devices with Mg:Ag/Ag, LiF/Al and Al-only cathodes were also fabricated in the same run for comparison. Similar to the LiF/Al cathodes, the LiF/Mg:Ag/Ag cathode greatly improved the performance of the device over the Mg:Ag/Ag cathode. A LiF layer of 0.5 nm significantly enhanced the electron injection and resulted in lower turn-on voltage and increased device efficiency. The turn-on voltage of the device with 0.5 nm LiF as buffered layer is as low as 2.8 V. At injection current density of 20 mA/cm2, the current efficiency and power efficiency of the device is 5.56 cd/A and 1.94 lm/W, respectively. Compared to the device with Mg:Ag/Ag only cathode, the turn-on voltage is 1.6 V lower, the current efficiency improved by 75 %, and power efficiency is almost double. The performance of the device is also much improved over the device with LiF/Al cathode.
研究了基于带有LiF/Mg:Ag/Ag阴极的三（8-羟基喹啉）铝器件的有机发光器件的器件特性。在同一批次中还制备了带有Mg:Ag/Ag、LiF/Al和仅Al阴极的器件用于比较。与LiF/Al阴极类似，LiF/Mg:Ag/Ag阴极相比Mg:Ag/Ag阴极极大地改善了器件性能。0.5 nm的LiF层显著增强了电子注入，导致开启电压降低且器件效率提高。以0.5 nm LiF作为缓冲层的器件开启电压低至2.8 V。在注入电流密度为20 mA/cm²时，该器件的电流效率和功率效率分别为5.56 cd/A和1.94 lm/W。与仅带有Mg:Ag/Ag阴极的器件相比，开启电压低1.6 V，电流效率提高了75%，功率效率几乎翻倍。该器件的性能也比带有LiF/Al阴极的器件有很大改善。
