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用于具有六边形或三角形气孔的光子晶体的有前景的低损伤制造方法:选择性区域金属有机气相外延。

Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes: selective area metal organic vapor phase epitaxy.

作者信息

Yang Lin, Motohisa Junichi, Takeda Junichiro, Fukui Takashi

出版信息

Opt Express. 2005 Dec 26;13(26):10823-32. doi: 10.1364/opex.13.010823.

DOI:10.1364/opex.13.010823
PMID:19503300
Abstract

The photonic band diagrams of the photonic crystal slabs (PCSs) with various structural air holes were calculated by plane wave expansion method with super cell method. The calculated results indicate that the PCSs with hexagonal or triangular air holes have enough large photonic band gaps in the guided mode spectrum, hence they are good candidates to be used for the PC devices. The PCs with hexagonal or triangular air holes were fabricated successfully on n-type GaAs (111)B substrate by selective-area metal organic vapor phase epitaxy (SA-MOVPE). Vertical and smooth facets are formed and the uniformities are very good. The same process was also used to fabricate hexagonal air hole arrays with the width of 100 nm successfully. A procedure was proposed and utilized to fabricate the air-bridge PCS with normal hexagonal air holes. The fabricated hexagonal air holes are very uniform and the sidewalls are smooth and vertical. Our experimental results indicate that SA-MOVPE growth is a promising low-damage fabrication method for PC devices and photonic nano-strucutres.

摘要

采用超元胞方法的平面波展开法计算了具有不同结构气孔的光子晶体平板(PCSs)的光子能带图。计算结果表明,具有六边形或三角形气孔的光子晶体平板在导模光谱中有足够大的光子带隙,因此它们是用于光子晶体器件的良好候选材料。通过选择性区域金属有机气相外延(SA-MOVPE)在n型GaAs(111)B衬底上成功制备了具有六边形或三角形气孔的光子晶体。形成了垂直且光滑的刻面,均匀性非常好。同样的工艺也成功地用于制备宽度为100nm的六边形气孔阵列。提出并采用了一种制备具有正六边形气孔的气桥光子晶体平板的工艺。制备的六边形气孔非常均匀,侧壁光滑且垂直。我们的实验结果表明,SA-MOVPE生长是一种用于光子晶体器件和光子纳米结构的有前途的低损伤制备方法。

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