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电磁共振增强型硅金属-半导体-金属光电探测器的数值模拟

Numerical modeling of electromagnetic resonance enhanced silicon metal-semiconductor-metal photodetectors.

作者信息

Crouse David, Arend Mark, Zou Jianping, Keshavareddy Pavan

出版信息

Opt Express. 2006 Mar 20;14(6):2047-61. doi: 10.1364/oe.14.002047.

DOI:10.1364/oe.14.002047
PMID:19503536
Abstract

A rigorous method of modeling the performance of metal-semiconductor-metal photodetectors (MSM-PD) that use several electromagnetic resonance (ER) modes and optical modes to enhance performance is presented. These ER and optical modes include surface plasmons, Wood-Rayleigh anomalies and vertical cavity modes. Five modeling algorithms are integrated together in a time-dependent way to model a 256 pseudo-random bit sequence (PRBS) of 850nm wavelength TM polarized light, the electromagnetic field distribution in the MSM-PD, quasi-static electric field, the charge carrier motion, and an algorithm to construct eye diagrams and analyze responsivity, inter-symbol interference (ISI) and bit error ratio (BER). We report on the use of a combination of ER and optical modes in channeling more than 83% of the incident light into the silicon even though 60% of the Si surface area is covered with metal contacts. Also, this channeled light is localized near the Si surface below the contact window. The absorption in the metal contacts, reflection, diffraction, electromagnetic field profiles, Poynting vector, photocurrent, eye diagrams, quality factors, responsivity and BER are calculated. Designs for Si MSM-PDs with a bandwidth of 100Gb/s, responsivities in the range of 0.05?0.30A/W and BERs in the range of 10-20?10-10 are described.

摘要

提出了一种严格的方法,用于对使用多种电磁共振(ER)模式和光学模式来提高性能的金属-半导体-金属光电探测器(MSM-PD)的性能进行建模。这些ER和光学模式包括表面等离子体激元、伍德-瑞利异常和垂直腔模式。五种建模算法以时间相关的方式集成在一起,以对波长为850nm的TM偏振光的256伪随机比特序列(PRBS)、MSM-PD中的电磁场分布、准静态电场、电荷载流子运动以及构建眼图并分析响应度、符号间干扰(ISI)和误码率(BER)的算法进行建模。我们报告了结合使用ER和光学模式,即使60%的硅表面积被金属触点覆盖,仍能将超过83%的入射光引导到硅中。此外,这种引导光位于接触窗口下方的硅表面附近。计算了金属触点中的吸收、反射、衍射、电磁场分布、坡印廷矢量、光电流、眼图、品质因数、响应度和BER。描述了带宽为100Gb/s、响应度在0.05至0.30A/W范围内且BER在10^-20至10^-10范围内的硅MSM-PD的设计。

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