Park Yong Seob, Noh Haw Young, Lee Nae-Eung, Hong Byungyou
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
J Nanosci Nanotechnol. 2009 Jun;9(6):3478-82. doi: 10.1166/jnn.2009.ns19.
Nanocrystalline amorphous carbon (nc a-C) films recently prepared in our laboratory exhibited very low resistivity (< 1 momega x cm) and good conductivity without any dopant. They also showed properties such as good adhesion to glass and plastic substrates, smooth surface, low friction coefficient, thermal stability, and high transparency. We applied nc a-C films to the bottom-gated electrodes of organic thin film transistors (OTFTs). In this work, we describe the characterization of conductive nc a-C films synthesized by closed-field unbalanced magnetron (CFUBM) sputtering and fabricate OTFTs of a bottom gate structure using pentacene as the active layer and polyvinylphenol (PVP) as the gate dielectric on the nc a-C gate electrode. We investigated the surface and electrical properties of each layer using an AFM method and estimated the device properties of OTFTs including I(D)-V(D), I(D)-V(G), threshold voltage V(T), on/off ratio, and field effect mobility.
我们实验室最近制备的纳米晶非晶碳（nc a-C）薄膜表现出极低的电阻率（<1 mΩ·cm）且无需任何掺杂剂就具有良好的导电性。它们还展现出诸如对玻璃和塑料基板具有良好附着力、表面光滑、摩擦系数低、热稳定性以及高透明度等特性。我们将nc a-C薄膜应用于有机薄膜晶体管（OTFT）的底栅电极。在这项工作中，我们描述了通过闭场非平衡磁控管（CFUBM）溅射合成的导电nc a-C薄膜的特性，并在nc a-C栅电极上使用并五苯作为有源层、聚乙烯基苯酚（PVP）作为栅介质制备了底栅结构的OTFT。我们使用原子力显微镜（AFM）方法研究了各层的表面和电学特性，并估算了OTFT的器件特性，包括漏极电流-漏极电压（I(D)-V(D)）、漏极电流-栅极电压（I(D)-V(G)）、阈值电压V(T)、开/关比以及场效应迁移率。
