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在单个电子束光刻步骤中接触单个铁(110)点。

Contacting individual Fe(110) dots in a single electron-beam lithography step.

作者信息

Cheynis F, Haas H, Fournier T, Ranno L, Wernsdorfer W, Fruchart O, Toussaint J-C

机构信息

Institut Néel, CNRS-UJF, BP 166, Grenoble Cedex 9, France.

出版信息

Nanotechnology. 2009 Jul 15;20(28):285302. doi: 10.1088/0957-4484/20/28/285302. Epub 2009 Jun 23.

Abstract

We report on a new approach, entirely based on an electron-beam lithography technique, to contact electrically, in a four-probe scheme, single nanostructures obtained by self-assembly. In our procedure, nanostructures of interest are located and contacted in the same fabrication step. This technique has been developed to study the field-induced reversal of an internal component of an asymmetric Bloch domain wall observed in elongated structures such as Fe(110) dots. We have focused on the control, using an external magnetic field, of the magnetization orientation within Néel caps that terminate the domain wall at both interfaces. Preliminary magneto-transport measurements are discussed demonstrating that single Fe(110) dots have been contacted.

摘要

我们报告了一种全新的方法,该方法完全基于电子束光刻技术,通过四探针方案对自组装获得的单个纳米结构进行电接触。在我们的过程中,感兴趣的纳米结构在同一制造步骤中被定位并接触。开发此技术是为了研究在诸如Fe(110)点等细长结构中观察到的不对称布洛赫畴壁内部组件的场致反转。我们专注于利用外部磁场控制在畴壁两端界面处终止畴壁的奈尔帽内的磁化方向。讨论了初步的磁输运测量结果,证明已对单个Fe(110)点进行了接触。

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