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Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier.

作者信息

Klopp Peter, Griebner Uwe, Zorn Martin, Klehr Andreas, Liero Armin, Weyers Markus, Erbert Götz

机构信息

Max Born Institute, Berlin, Germany.

出版信息

Opt Express. 2009 Jun 22;17(13):10820-34. doi: 10.1364/oe.17.010820.

DOI:10.1364/oe.17.010820
PMID:19550482
Abstract

Almost chirp-free pulses with a duration of 190 fs were achieved from a mode-locked semiconductor disk laser (SDL) emitting at approximately 1045 nm. Pulse shaping was different from the soliton-like mode-locking process known from lasers using dielectric gain media; passive amplitude modulation provided by a fast saturable absorber was essential. The spectrum of the absorber had to be matched to the gain spectrum within a few nm. A tapered diode amplifier was demonstrated to be a device for both picking and amplifying SDL pulses. The pulse repetition rate of the SDL output was reduced from 3 GHz to 47 MHz.

摘要

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