Tuboltsev V, Räisänen J
Division of Materials Physics, Department of Physics, University of Helsinki, PO Box 43, FIN-00014, Finland.
Nanotechnology. 2009 Aug 19;20(33):335302. doi: 10.1088/0957-4484/20/33/335302. Epub 2009 Jul 28.
In nanoelectronics a nanowire forms an elemental building block enabling a charge transfer in complex nanostructures. Ion beam etching has been applied for downsizing of prefabricated Au nanowires in the sub-50 nm linewidth regime, aiming at achieving effective cross sections of less than 10 nm. Low energy Ar+ and Ga+ ions were employed for dry ion beam etching of Au nanowires. Nanometer-precise gradual downsizing to an effective diameter as small as 9 nm has been achieved when using Ar+ ions. In contrast, the chemical nature of Ga and its surface condensation into a nanosized phase turned out to act destructively on the nanowires' morphology, hampering the process of downsizing. In the surface nanocondensate Ga was found to coexist in both solid and liquid states, exhibiting polymorphism and peculiar dynamics under ion irradiation.
在纳米电子学中，纳米线是一种基本构建单元，可实现复杂纳米结构中的电荷转移。离子束蚀刻已被用于在小于50纳米线宽范围内缩小预制金纳米线的尺寸，目标是实现小于10纳米的有效横截面。低能量的氩离子（Ar⁺）和镓离子（Ga⁺）被用于金纳米线的干法离子束蚀刻。当使用氩离子时，已实现了精确到纳米级的逐步缩小，直至有效直径小至9纳米。相比之下，镓的化学性质及其表面凝聚成纳米相被证明对纳米线的形态具有破坏性，阻碍了尺寸缩小的过程。在表面纳米凝聚物中，发现镓以固态和液态共存，在离子辐照下表现出多态性和特殊的动力学特性。
