Li Wei, Zhou Jiang, Zhang Xian-Gao, Xu Jun, Xu Ling, Zhao Weiming, Sun Ping, Song Fengqi, Wan Jianguo, Chen Kunji
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China.
Nanotechnology. 2008 Apr 2;19(13):135308. doi: 10.1088/0957-4484/19/13/135308. Epub 2008 Feb 26.
We prepare an array of amorphous silicon nanopillars by using a modified nanosphere lithography method. The fabrication process includes three steps: (1) 70 nm thick a-Si film was deposited on a crystalline silicon substrate; (2) the substrate was coated with a monolayer of polystyrene (PS) spheres to form an ordered structure on the a-Si thin film surface; (3) the sample was etched by reactive ion etching to produce the amorphous silicon pillar array. The results of field emission measurements show a low turn-on electrical field of about 4.5 V microm(-1) at a current density of 10 microA cm(-2). A relatively high current density exceeding 0.2 mA cm(-2) at 9 V microm(-1) was also obtained. The field enhancement factor is calculated to be about 1240 according to the Fowler-Nordheim (FN) relationship. The good field emission characteristics are attributed to the geometrical morphology, crystal structure and the high density of the field emitter of the silicon nanopillar.
我们使用改进的纳米球光刻法制备了一系列非晶硅纳米柱。制造过程包括三个步骤：（1）在晶体硅衬底上沉积70nm厚的非晶硅薄膜；（2）在衬底上涂覆单层聚苯乙烯（PS）球，以在非晶硅薄膜表面形成有序结构；（3）通过反应离子蚀刻对样品进行蚀刻，以制备非晶硅柱阵列。场发射测量结果表明，在电流密度为10μA cm-2时，开启电场约为4.5Vμm-1。在9Vμm-1时，还获得了超过0.2mA cm-2的相对较高的电流密度。根据福勒-诺德海姆（FN）关系，场增强因子计算约为1240。良好的场发射特性归因于硅纳米柱的几何形态、晶体结构和场发射体的高密度。
