室温下硅基氧化锌纳米棒阵列的电泵浦紫外随机激光发射

Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si.

作者信息

Ma Xiangyang, Pan Jingwei, Chen Peiliang, Li Dongsheng, Zhang Hui, Yang Yang, Yang Deren

机构信息

Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, ZhejiangUniversity, Hangzhou 310027, China.

出版信息

Opt Express. 2009 Aug 3;17(16):14426-33. doi: 10.1364/oe.17.014426.

DOI:10.1364/oe.17.014426

PMID:19654850

Abstract

We report the electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si. Metal-insulator-semiconductor structures in a form of Au/SiO(2)/ZnO-nanorod-array were fabricated on Si. Such devices exhibit random lasing when the Au electrode is applied with a sufficiently high positive voltage. In this context, in the region adjacent to SiO(2)/ZnO-nanorod-array interface, stimulated emission from ZnO occurs due to population inversion and, moreover, light is scattered by the nanorods and SiO(2) films. Therefore, random lasing proceeds due to optical gain achieved by the stimulated emission and multiple scattering.

摘要

我们报道了在硅上的氧化锌纳米棒阵列实现的电泵浦紫外随机激光。在硅上制备了金/二氧化硅/氧化锌纳米棒阵列形式的金属-绝缘体-半导体结构。当给金电极施加足够高的正电压时，此类器件会呈现随机激光现象。在此情况下，在与二氧化硅/氧化锌纳米棒阵列界面相邻的区域，由于粒子数反转，氧化锌产生受激发射，此外，光被纳米棒和二氧化硅薄膜散射。因此，由于受激发射实现的光学增益和多次散射，随机激光得以产生。