室温下费米能级调谐的赫斯勒合金Co2FeAl0.5Si0.5中的半金属性证明。
Demonstration of half-metallicity in fermi-level-tuned Heusler alloy Co2FeAl0.5Si0.5 at room temperature.
作者信息
Shan R, Sukegawa H, Wang W H, Kodzuka M, Furubayashi T, Ohkubo T, Mitani S, Inomata K, Hono K
机构信息
Magnetic Materials Center, National Institute for Materials Science (NIMS), Tsukuba, 305-0047, Japan.
出版信息
Phys Rev Lett. 2009 Jun 19;102(24):246601. doi: 10.1103/PhysRevLett.102.246601. Epub 2009 Jun 15.
Fermi level tuning has been successfully demonstrated in Co-based full-Heusler alloy Co(2)FeAl(0.5)Si(0.5) (CFAS). The half-metallic band gap of CFAS was proved by the behavior of differential conductance of CFAS/(MgAl(2))O(x)/CoFe magnetic tunneling junctions with an unexplored crystalline (MgAl(2))O(x) barrier. CFAS exhibits the highest effective spin polarization (P_{eff}) at 300 K and the weakest temperature dependence of P_{eff} among all known half metals. Further study shows that P_{eff} of CFAS decays with increasing temperature (T) following T;{3/2} law perfectly, which indicates that the depolarization of CFAS is determined by spin wave excitation only.
费米能级调控已在钴基全赫斯勒合金Co₂FeAl₀.₅Si₀.₅（CFAS）中成功得到证实。通过具有未探索的晶体（MgAl₂）Oₓ势垒的CFAS/（MgAl₂）Oₓ/CoFe磁性隧道结的微分电导行为，证明了CFAS的半金属带隙。在所有已知的半金属中，CFAS在300 K时表现出最高的有效自旋极化率（Pₑₚ），且Pₑₚ的温度依赖性最弱。进一步研究表明，CFAS的Pₑₚ随温度（T）升高遵循T³/²定律完美衰减，这表明CFAS的去极化仅由自旋波激发决定。
Zotero 插件